Product Summary

The 04N60C3 is a cool MOS power transistor. The package of this device is PG-TO263.

Parametrics

Absolute maximum ratings: (1)continuous drain current, Tc=25℃, Id: 4.5A; (2)continuous drain current, Tc=100℃, Id: 2.8A; (3)Pulsed drain current, tp limited by Tjmax, Id puls: 13.5A; (4)Avalanche energy, single pulse, Id=3.4, Vdd=50V, Eas=130mJ; (5)Avalance energy, repetitive tAR limited by Tjmax, Id=4.5A, Vdd= 50V, Ear=0.4mJ; (6)Avalance current, repetitive tAR limited by Tjmax, Iar: 4.5A; (7)Gate source voltage static, Vgs: ±20V; (8)Gate source voltage AC(f>1HZ), Vgs: ±30V; (9)Power dissipation, Tc=25℃, Ptot: 50W; (10)Operation and storage temperature, Tj, Tstg: -55 to +150℃; (11)Reverse diode dv/dt, dv/dt: 15V/ns.

Features

Features: (1)new revolutionary high voltage technology; (2)ultra low gate charge; (3)periodic avalanche rated; (4)extreme dv/dt rated; (5)high peak current capability; (6)improved transconductance; (7)qualified according to JEDEC for target applications.

Diagrams